Browsing by Subject "C30B 29/48"
Now showing items 1-1 of 1
-
(United States. Patent and Trademark Office; Texas A&M University. Libraries, 2002-07-16)A method of forming lattice matched single crystal wide bandgap II-VI compound semiconductor films over a silicon substrate includes first cleaning (10) the silicon substrate. A passivation layer is formed (18), which may ...